Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel
Ferroelectric-Gate Field-Effect Transistor Memory With Recessed Channel
复制标题
具有凹槽通道的铁电栅场效应晶体管存储器
DOI：
10.1109/led.2020.3001129
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发表时间：
2020
影响因子：
4.9
通讯作者：
D. Kwon
中科院分区：
文献类型：
--
作者：
Kitae Lee;J. Bae;Sihyun Kim;Jong;Byung;D. Kwon
我们展示了一种新型的铁电栅场效应晶体管与凹陷沟道（R-FeFET），以提高存储器窗口（MW），编程/擦除速度，长时间保持，和耐久性同时。基于包括校准的铁电材料（FE）参数的技术计算机辅助设计（TCAD）模拟，揭示了与常规平面FeFET相比，通过FE上的更大电场（e场）增强极化，从而导致更宽的MW和更快的编程/擦除速度。此外，R-FeFET的耐久性/保持性预期将得到改善，因为跨SiO2夹层的电场显著降低。
We demonstrate a novel ferroelectric-gate field effect transistor with recessed channel (R-FeFET) to improve memory window (MW), program/erase speed, long-time retention, and endurance simultaneously. Based on technology computer-aided design (TCAD) simulations including calibrated ferroelectric material (FE) parameters, it is revealed that the polarization is enhanced by the larger electric field (e-field) across the FE compared to a conventional planar FeFET, resulting in the wider MW and the faster program/erase speed. Moreover, the endurance/retention of the R-FeFET is expected to be improved as the e-field across the SiO2 interlayer is significantly reduced.
影响因子：
64.8
作者：
Cheema, Suraj S.;Kwon, Daewoong;Salahuddin, Sayeef
通讯作者：
Salahuddin, Sayeef