Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature
Femtosecond dynamics and absorbance of self-organized InAs quantum dots emitting near 1.3 μm at room temperature
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DOI：
10.1063/1.1315347
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发表时间：
2000-10-02
影响因子：
4
通讯作者：
West, K
中科院分区：
文献类型：
--
作者：
Birkedal, D;Bloch, J;West, K
在室温下对自组织InAs量子点进行的高灵敏度飞秒差分透射测量使我们能够确定共振激发的电子-空穴对的动力学以及量子点的吸光度（α（0）d）。室温差分传输信号随65 ps的时间常数而减小，该时间常数由从初始光激发态到更高激发态的激发速率确定。从差分透射的大小，我们推断出吸收率，因此在垂直于层的方向上的最大增益/通过，在具有六层量子点的样品的光谱峰处近似为2.1x10（-3）。(C)2000年美国物理学会。【S0003-6951（00）05340-7】。
High-sensitivity, femtosecond differential transmission measurements on self-organized InAs quantum dots at room temperature allow us to determine the dynamics of resonantly excited electron-hole pairs, as well as the absorbance (alpha(0)d) of quantum dots. The room temperature differential transmission signal decreases with a time constant of 65 ps, determined by the rate of excitation from the initial photoexcited states to higher excited states. From the magnitude of the differential transmission, we deduce that the absorbance, and hence the maximum gain/pass in the direction normal to the layers, is approximate to 2.1x10(-3) at the spectral peak for our sample with six layers of quantum dots. (C) 2000 American Institute of Physics. [S0003-6951(00)05340-7].