Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications
Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications
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DOI：
10.1063/1.2378487
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发表时间：
2006-11
影响因子：
4
通讯作者：
R. Nakane;Masaaki Tanaka;S. Sugahara
中科院分区：
文献类型：
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作者：
R. Nakane;Masaaki Tanaka;S. Sugahara
采用绝缘体上硅衬底制备了具有DO_3相结构的化学计量比和非化学计量比铁磁性Fe3+δSi1−δ薄膜。Fe~(3+)-δ-Si1-−δ铁磁性薄膜是在超薄的SOI层和其上沉积的Fe层之间的热激活硅化反应中，通过快速热退火而形成的。通过控制SOI层和Fe层的相对厚度比来精确控制薄膜的化学成分，在620~780℃的温度范围内获得了高度择优取向的Do3+δSi1−δ薄膜。Fe3+δSi1−δ薄膜具有明显的铁磁性，居里温度远高于室温。
The authors developed a preparation technique of stoichiometric and off-stoichiometric ferromagnetic Fe3+δSi1−δ thin films with a DO3 phase structure using silicon-on-insulator (SOI) substrates. Ferromagnetic Fe3+δSi1−δ films were formed by thermally activated silicidation reaction between an ultrathin SOI layer and a Fe layer deposited on it, induced by rapid thermal annealing. Their chemical composition was precisely controlled by the relative thickness ratio of the SOI and Fe layers, and highly oriented DO3-phase polycrystalline Fe3+δSi1−δ films were obtained with annealing temperature ranging from 620 to 780°C. The Fe3+δSi1−δ films exhibited ferromagnetic nature with the Curie temperature much higher than room temperature.