Transistor-like behavior of transition metal complexes
Transistor-like behavior of transition metal complexes
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DOI：
10.1021/nl050818o
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发表时间：
2005-07-01
期刊：
影响因子：
10.8
通讯作者：
Vos, JG
中科院分区：
文献类型：
--
作者：
Albrecht, T;Guckian, A;Vos, JG
通过半导体和金属纳米级结构的电子传输，（1）连接到外部电极的分子单层2-6和单分子（7-15）显示出在电子器件的未来小型化中具有潜在重要性的整流、开关和阶梯功能。然而，大多数报告的系统的共同点是超真空和/或低温工作条件。在这里，我们介绍了一个单分子器件的概念，基于一类强大的氧化还原活性过渡金属（Os（II）/（III））的配合物插入之间的工作电极和尖端的电化学扫描隧道显微镜（原位STM）。这种配置类似于单分子晶体管，其中参比电极对应于栅电极。它在室温下在冷凝物（这里是水）环境中工作。放大开关比高达50被发现时，氧化还原水平被带入的能量窗口之间的费米能级的电极的过电位（“栅极电压”）。两个Os（II）/（III）配合物的电流-电压特性已被系统地表征，并得到基于分子电荷输运理论的理论框架的支持。
Electron transport through semiconductor and metallic nanoscale structures,(1) molecular monolayers,2-6 and single molecules(7-15) connected to external electrodes display rectification, switch, and staircase functionality of potential importance in future miniaturization of electronic devices. Common to most reported systems is, however, ultrahigh vacuum and/or cryogenic working conditions. Here we introduce a single-molecule device concept based on a class of robust redox active transition metal (Os(II)/(III)) complexes inserted between the working electrode and tip in an electrochemical scanning tunneling microscope (in situ STM). This configuration resembles a single-molecule transistor, where the reference electrode corresponds to the gate electrode. It operates at room temperature in a condensed matter (here aqueous) environment. Amplification on-off ratios up to 50 are found when the redox level is brought into the energy window between the Fermi levels of the electrodes by the overpotential ("gate voltage"). The current-voltage characteristics for two Os(II)/(III) complexes have been characterized systematically and supported by theoretical frames based on molecular charge transport theory.