Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
Understanding ferroelectric Al:HfO2 thin films with Si-based electrodes for 3D applications
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DOI：
10.1063/1.4984068
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发表时间：
2017-05-28
影响因子：
3.2
通讯作者：
Van Houdt, J.
中科院分区：
文献类型：
--
作者：
Florent, K.;Lavizzari, S.;Van Houdt, J.
铁电氧化铪是逻辑和存储器应用的有希望的候选者，因为它在nm尺寸下保持优异的铁电性质，确保与最先进的半导体制造的兼容性。大多数已发表的论文报道了通过金属-绝缘体-金属电容器或金属-绝缘体-硅晶体管对这种材料的研究。然而，对于沟道和栅极都是多晶硅的3D垂直晶体管，不能忽略硅基电极的情况。在本文中，我们报道了各种铁电电容器的制造与硅（S）基导电层和氮化钛金属（M）电极使用铝掺杂氧化铪（I）。具有硅基电极的铁电器件显示出上级的极化和陡峭的开关。这些结果为潜在的3D NAND替代品的3D集成铺平了道路。出版社：AIP Publishing
Ferroelectric hafnium oxide is a promising candidate for logic and memory applications as it maintains excellent ferroelectric properties at nm-size ensuring compatibility with state of the art semiconductor manufacturing. Most of the published papers report on the study of this material through Metal-Insulator-Metal capacitors or Metal-Insulator-Silicon transistors. However, for 3D vertical transistors in which both the channel and gate are polysilicon, the case of silicon-based electrodes cannot be ignored. In this paper, we report the fabrication of various ferroelectric capacitors with silicon (S) based conductive layers and titanium nitride metal (M) electrodes using aluminum doped hafnium oxide (I). The ferroelectric device with silicon-based electrodes shows superior polarization and steeper switching. These results pave the way toward 3D integration for potential 3D NAND replacement. Published by AIP Publishing.