A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy
A study of absorption coefficient spectra in a-Si:H films near the transition from amorphous to crystalline phase measured by resonant photothermal bending spectroscopy
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DOI：
10.1016/j.jnoncrysol.2007.10.039
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发表时间：
2008-05
影响因子：
3.5
通讯作者：
N. Yoshida;Y. Shimizu;T. Honda;Toshiaki Yokoi;S. Nonomura
中科院分区：
文献类型：
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作者：
N. Yoshida;Y. Shimizu;T. Honda;Toshiaki Yokoi;S. Nonomura
用共振光热弯曲谱估计了宽禁带氢化非晶硅薄膜的光吸收谱。发现在1.2-1.6eV的光子能量范围内存在过量吸收。这种过量的吸收通过光照射而减少，并且通过热退火而不能恢复。过量吸收的减少可能是由于光照射引起的膜的氧化。
Optical absorption spectra of a widegap hydrogenated amorphous silicon film have been estimated by resonant photothermal bending spectroscopy. It is found that excess absorption exists over the photon energy region of 1.2–1.6eV. This excess absorption decreases by light illumination and does not recover through thermal annealing. The decrease in the excess absorption may be due to oxidization of the film by light illumination.