ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES
ELECTROMIGRATION FAILURE MODES IN ALUMINUM METALLIZATION FOR SEMICONDUCTOR DEVICES
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DOI：
10.1109/proc.1969.7340
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发表时间：
1969-01-01
影响因子：
20.6
通讯作者：
BLACK, JR
中科院分区：
文献类型：
--
作者：
BLACK, JR
描述了涉及半导体器件铝金属化的两种损耗型失效模式。这两种模式都涉及通过导电电子和金属离子之间的动量交换来传递质量。第一种失效模式是由于铝中的空位凝结形成空洞而形成电开路。第二种是通过硅向铝的溶解在硅中形成蚀刻坑，以及通过电子风力将溶质离子沿着铝导体从硅-铝界面向下传输。这个过程一直持续，直到一个蚀刻坑在硅中生长到足够的深度，使下面的结短路。
Two wear-out type failure modes involving aluminum metallization for semiconductor devices are described. Both modes involve mass transport by momentum exchange between conducting electrons and metal ions. The first failure mode is the formation of an electrically open circuit due to the condensation of vacancies in the aluminum to form voids. The second is the formation of etch pits into silicon by the dissolution of silicon into aluminum, and the transport of the solute ions down the aluminum conductor away from the silicon-aluminum interface by electron wind forces. The process continues until an etch pit grows into the silicon to a depth sufficient to short out an underlying junction.