Electron stimulated polymerization of solid C60
Electron stimulated polymerization of solid C60
复制标题
固体C60的电子刺激聚合
DOI：
10.1063/1.111113
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发表时间：
1994
影响因子：
4
通讯作者：
J. H. Weaver
中科院分区：
文献类型：
--
作者：
Y. Zhao;D. Poirier;R. J. Pechman;J. H. Weaver
通过扫描隧道显微镜（STM）的1500 eV电子和电子枪的1500 eV电子，对GaAs（110）上生长的纯C60薄膜进行了电子刺激改性。在STM修饰区域，观察到各种表观分子大小和形状，分子内对比度和分子间区别模糊。1500 eV电子轰击的表面显示出较大面积的修改，这些结果表明聚合的生长模式。这种改性表面的退火恢复了有序的面心立方结构。
Electron‐stimulated modifications to pure C60 films grown on GaAs(110) have been induced by ∼3 eV electrons from a scanning tunneling microscope (STM) and from 1500 eV electrons from an electron gun. In the STM‐modified area, a variety of apparent molecular sizes and shapes were observed with intramolecular contrast and a blurring of intermolecular distinction. Surfaces bombarded by 1500 eV electrons showed modifications over larger areas and these results suggested a growth mode for polymerization. Annealing of such modified surfaces restored the ordered fcc structure.