Issues Associated With Polarization Independence in Silicon Photonics
Issues Associated With Polarization Independence in Silicon Photonics
复制标题
DOI：
10.1109/jstqe.2006.883136
复制
发表时间：
2006-11
影响因子：
4.9
通讯作者：
G. Reed;G. Mashanovich;W. Headley;B. Timotijevic;F. Gardes;S. Chan;P. Waugh;N. Emerson;C. Png;M. Paniccia;Ansheng Liu;D. Hak;V. Passaro
中科院分区：
文献类型：
--
作者：
G. Reed;G. Mashanovich;W. Headley;B. Timotijevic;F. Gardes;S. Chan;P. Waugh;N. Emerson;C. Png;M. Paniccia;Ansheng Liu;D. Hak;V. Passaro
由于新兴的应用领域和器件和技术开发方面的几项引人注目的成功，对硅光子学的兴趣正在急剧增加。尽管早期的工作可以追溯到20世纪80年代中期，但直到最近几年才取得了巨大的进展。虽然已经开发了许多研究方法，但20世纪90年代早期到中期的工作与最近的工作之间的显着差异在于，后者与减少形成器件的波导的横截面尺寸的趋势有关。因此，出现了这样的问题，即是否应该转向高度为250 nm量级、宽度为几百纳米的非常小的条形波导（硅线）以改善器件性能，但几乎没有希望实现偏振独立性，或者使用稍微更大的脊形波导，其提供更多的机会来控制器件的偏振依赖性。在本文中，我们讨论了适用于一种方法或其他的设备，并提出了与条形和脊形波导相关的设计。特别地，我们提出了自由光谱范围高达12 nm的与偏振无关的环形谐振器的设计，我们提出了用于数十千兆赫范围的带宽的调制器，并且提出了用于脊形波导和条形波导的基于光栅的耦合器，和/或用于晶片级测试，以及通过离子注入开发布拉格光栅的新方法
Interest in silicon photonics is experiencing a dramatic increase due to emerging applications areas and several high profile successes in device and technology development. Despite early work dating back to the mid-1980s, dramatic progress has been made only in the recent years. While many approaches to research have been developed, the striking difference between the work of the early to mid-1990s, and more recent work, is that the latter has been associated with a trend to reduce the cross sectional dimensions of the waveguides that form the devices. The question arises therefore, as to whether one should move to very small strip waveguides (silicon wires) of the order of 250 nm in height and a few hundred nanometres in width for improved device performance but with little hope of polarization independence, or to utilize slightly larger rib waveguides that offer more opportunity to control the polarization dependence of the devices. In this paper, we discuss the devices suitable for one approach or the other, and present the designs associated both with strip and rib waveguides. In particular, we present the designs of polarization-independent ring resonators with free spectral ranges up to 12 nm, we propose modulators for bandwidths in the tens of gigahertz regime, and present grating-based couplers for rib and strip waveguides, and/or for wafer scale testing, as well as a novel means of developing Bragg gratings via ion implantation