Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Growth of bulk β-Ga2O3 single crystals by the Czochralski method
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DOI：
10.1063/5.0076962
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发表时间：
2022-01-07
影响因子：
3.2
通讯作者：
Galazka, Zbigniew
中科院分区：
文献类型：
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作者：
Galazka, Zbigniew
本教程描述了通过直拉法生长块状 β-Ga2O3 单晶，重点关注关键的生长方面。特别是，它详细介绍了作为晶体生长关键因素的 Ga2O3 热力学，以及对于晶体尺寸放大至关重要的综合解决方案。此外，还讨论了自由载流子吸收，因为它对生长稳定性有很大影响。还描述了晶体生长方向和有意掺杂作为晶体生长的重要因素。晶体生长的所有方面都伴随着所得晶体、其结构质量和基本物理性质。 (C) 2022 作者。
The present Tutorial provides a description of the growth of bulk beta-Ga2O3 single crystals by the Czochralski method with a focus on the critical growth aspects. In particular, it details the thermodynamics of Ga2O3 as the key factor for crystal growth along with comprehensive solutions that are essential for crystal size scale-up. Also, free carrier absorption is discussed, as it has a great impact on growth stability. The crystal growth direction and intentional doping, as important factors for crystal growth, are described as well. All of the aspects of the crystal growth are accompanied by resulting crystals, their structural quality, and basic physical properties. (C) 2022 Author(s).