Characterization of manganese-doped BaTiO3–(Bi1∕2Na1∕2)TiO3 positive temperature coefficient of resistivity ceramics using impedance spectroscopy
Characterization of manganese-doped BaTiO3–(Bi1∕2Na1∕2)TiO3 positive temperature coefficient of resistivity ceramics using impedance spectroscopy
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DOI：
10.1063/1.2884714
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发表时间：
2008-03
影响因子：
3.2
通讯作者：
P. Xiang;H. Takeda;T. Shiosaki
中科院分区：
文献类型：
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作者：
P. Xiang;H. Takeda;T. Shiosaki
用阻抗分析法研究了少量Mn掺杂的BaTiO_3-（Bi_（1）Sn_2Na_（1）Sn_2）TiO_3（BT-BNT）正温度系数电阻率陶瓷。阻抗/模量谱图显示，在BNT含量为4mol%的无Mn BT-BNT陶瓷中，除了晶粒和晶界外，还出现了第三电阻-电容（RC）响应，而在Mn掺杂样品中没有观察到。第三个RC元素可以归因于外晶粒区域中的钡空位富集层。阻抗谱的证据表明，高Bi施主部分地被Mn受主补偿，并且主要的电荷补偿缺陷随着掺杂少量Mn掺杂剂而从钡空位转移到电子。
Small amount of manganese (Mn)-doped BaTiO3–(Bi1∕2Na1∕2)TiO3 (BT-BNT) positive temperature coefficient of resistivity ceramics are investigated by impedance analyses. The impedance/modulus spectroscopic plots reveal that a third resistance-capacitance (RC) response besides grains and grain boundaries is exhibited in the Mn-free BT-BNT ceramic with 4mol% BNT, but is not observed in the Mn-doped samples. The third RC element can be attributed to a barium vacancy-rich layer in the outer grain region. The evidence of impedance spectroscopy indicates that the highly Bi donor is partially compensated by the Mn acceptor and the predominant charge compensation defect shifts from barium vacancies to electrons with doping small amount of Mn dopant.