High-Performance Enhancement-Mode Al？O？/AlGaN/GaN-on-Si MISFETs With 626 MW/cm2 Figure of Merit
High-Performance Enhancement-Mode Al？O？/AlGaN/GaN-on-Si MISFETs With 626 MW/cm2 Figure of Merit
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发表时间：
2015-03
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通讯作者：
黄森
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作者：
黄森
在本文中，部分栅极凹陷的增强型（E-模式）GaN功率器件的性能改善的实验证明。仔细控制凹陷深度的栅极凹陷以约1.5nm的优化凹陷势垒厚度进行，该厚度足够薄以完全耗尽栅极区域中的2-D电子气沟道。
In this paper, the partial gate recess for performance improvement of enhancement-mode (E-mode) GaN power devices is experimentally demonstrated. The gate recess with a careful control of the recess depth was performed with an optimized recessed barrier thickness of ~1.5 nm that is thin enough to completely deplete the 2-D electron gas channel in the gate region.