Rapid preparation of Ge0.9Sb0.1Te1 x via unique melt spinning: Hierarchical microstructure and improved thermoelectric performance

Rapid preparation of Ge0.9Sb0.1Te1 x via unique melt spinning: Hierarchical microstructure and improved thermoelectric performance
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通过独特的熔体纺丝快速制备 Ge0.9Sb0.1Te1àx:分层微观结构和改进的热电性能

DOI:
10.1016/j.jallcom.2018.09.144
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发表时间:
2019
影响因子:
6.2
通讯作者:
Zhou Xiaoyuan
Zhou Xiaoyuan
中科院分区:
材料科学2区
文献类型:
--
作者:
Tan Huan;Zhang Bin;Wang Guoyu;Chen Yongjin;Shen Xingchen;Guo Lijie;Han Xiaodong;Lu Xu;Zhou Xiaoyuan

文献摘要

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Thermoelectric semiconductors based on GeTe has been proved to be an important materials for converting waste heat into electricity. In this study, we demonstrate an enhancement of thermoelectric performance for p-type Ge0.9Sb0.1Te1+xby a unique melt spinning method combined with hot pressing (MS-HP), through which increased Seebeck coefficients and reduced thermal conductivities are achieved simultaneously. Moreover, the MS technique greatly gives rise to a variety of microstructures, such as the fine Ge precipitates, twins and nano-domains, all of which contribute to the significantly reduced thermal conductivities. Finally, the Ge0.9Sb0.1Te1.03reaches a maximumzTvalue of ∼1.9 at 760 K and a giant averagezTof ∼1.2 between 300 K and 820 K, which is comparable to the reported results for GeTe based materials. Combined with the rapid fabrication, Ge0.9Sb0.1Te1+xprepared by melt spinning process is an attractive p-type material for thermoelectric power generation application.