High performance CW 1.26 µm GaInNAsSb-SQW and 1.20 µm GaInAsSb-SQW ridge lasers
High performance CW 1.26 µm GaInNAsSb-SQW and 1.20 µm GaInAsSb-SQW ridge lasers
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高性能 CW 1.26 µm GaInNAsSb-SQW 和 1.20 µm GaInAsSb-SQW 脊形激光器
DOI：
10.1049/el:20001228
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发表时间：
2000
影响因子：
1.1
通讯作者：
A. Kasukawa
中科院分区：
文献类型：
--
作者：
H. Shimizu;K. Kumada;S. Uchiyama;A. Kasukawa
长波长GaInNAsSb单量子阱激光器和GaInAsSb单量子阱激光器，包括少量的锑已成功地生长的气体源分子束外延（GSMBE）和加工成脊形激光器。GaInNAsSb激光器在室温下以1.258 μm的CW操作振荡。获得了10.2mA的低连续阈值电流和146K的高特征温度（T0），这是GaInNAs基窄条激光器的最佳结果。此外，GaInAsSb激光器在室温下以1.20 μm的CW操作振荡。GaInAsSb激光器获得了6.3 mA的低CW阈值电流和256 K的高特征温度（T0），这也是1.2 μ m范围高应变GaInAs基窄条激光器的最佳结果。
Long-wavelength GaInNAsSb SQW lasers and GaInAsSb SQW lasers that include small amounts of Sb have been successfully grown by gas-source molecular beam epitaxy (GSMBE) and processed into ridge lasers. The GaInNAsSb lasers oscillated under CW operation at 1.258 µm at room temperature. A low CW threshold current of 10.2 mA and high characteristic temperature (T0) of 146 K were obtained for the GaInNAsSb lasers, which is the best result for GaInNAs-based narrow-stripe lasers. Furthermore, the GaInAsSb lasers oscillated under CW operation at 1.20 µm at room temperature. A low CW threshold current of 6.3 mA and high characteristic temperature (T0) of 256 K were obtained for the GaInAsSb lasers, which is also the best result for 1.2 µm-range highly strained GaInAs-based narrow-stripe lasers.