Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
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DOI：
10.1109/tie.2011.2114313
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发表时间：
2011-10-01
影响因子：
7.7
通讯作者：
Berkani, Mounira
中科院分区：
文献类型：
--
作者：
Smet, Vanessa;Forest, Francois;Berkani, Mounira
本文提出了绝缘栅双极晶体管（IGBT）功率模块老化的实验研究。目的是确定电源循环对这些具有高底板温度（60 摄氏度至 90 摄氏度）和宽温度波动（60 摄氏度至 100 摄氏度）的设备的影响。这些热应力值是根据汽车应用定义的。测试条件由本文将描述的两种类型的测试台提供。监控系统定期观察电气和热指标的变化。测试结束时（达到损坏标准或失效），将进行不同的分析（声学扫描和 SEM 成像），并系统地列出损坏情况。因此，使用五种不同的功率循环协议对 19 个 600V 200A IGBT 模块样品进行老化。结果的最终总结表明，老化机制主要涉及引线键合和发射极金属化，其影响逐渐取决于协议的严重性。
This paper presents an experimental study on the ageing of insulated-gate bipolar transistor (IGBT) power modules. The aim is to identify the effects of power cycling on these devices with high baseplate temperatures (60 degrees C to 90 degrees C) and wide temperature swings (60 degrees C to 100 degrees C). These values for thermal stresses have been defined according to automotive applications. The test conditions are provided by two types of test benches that will be described in this paper. The changes in electrical and thermal indicators are observed regularly by a monitoring system. At the end of the test (reaching damage criterion or failure), different analyses are performed (acoustic scanning and SEM imaging), and the damage is listed systematically. Nineteen samples of 600-V 200-A IGBT modules were thus aged using five different power-cycling protocols. The final summary of results shows that ageing mechanisms mainly concern wire bonds and emitter metallization, with gradual impact depending on protocol severity.