Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy
Annealing-Induced Structural Evolution of InAs Quantum Dots on InP (111)A Formed by Droplet Epitaxy
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液滴外延形成的 InP (111)A 上 InAs 量子点的退火诱导结构演化
DOI：
10.1021/acs.cgd.1c00276
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发表时间：
2021
影响因子：
3.8
通讯作者：
K. Sakoda
中科院分区：
文献类型：
--
作者：
T. Mano;A. Ohtake;N. Ha;T. Noda;Y. Sakuma;T. Kuroda;K. Sakoda
我们研究了液滴外延生长的InAlAs/InP（111）A衬底上无帽InAs量子点（QD）的退火诱导结构演化。未封端的InAs量子点的退火导致InAs从量子点流出，形成二维InAs。当二维InAs的覆盖率达到一定的饱和厚度时，InAs从量子点的流出受到抑制。在370 °C退火后，饱和厚度小于1个单层（ML）。当二维InAs仅在量子点周围形成时，InAs的流出受到一定程度的抑制。当退火前的量子点的原始尺寸足够大时，退火后量子点保留。在470 °C退火后，饱和厚度约为1 ML。InAs的流出继续，直到1 ML厚的二维InAs层覆盖几乎整个表面。当供给的InAs的总量足够大时，在退火后保留QD。包覆后的InAs量子点在电信波长附近表现出高效的光致发光（PL）发射。我们还观察到PL发射从1 ML厚的二维InAs。
We have studied the annealing-induced structural evolution of uncapped InAs quantum dots (QDs) on InAlAs/InP(111)A substrates formed by droplet epitaxy. The annealing of uncapped InAs QDs results in the outflow of InAs from the QDs, forming two-dimensional InAs. The outflow of InAs from QDs is suppressed when the coverage of the two-dimensional InAs reaches a certain saturation thickness. After annealing at 370 °C, the saturation thickness is less than 1 monolayer (ML). The outflow of InAs is suppressed after two-dimensional InAs forms only around the QDs to a certain limited extent. The QDs remain after annealing when the original size of the QDs before annealing is sufficiently large. After annealing at 470 °C, the saturation thickness is around 1 ML. The outflow of InAs continues until a 1 ML-thick, two-dimensional InAs layer covers nearly the entire surface. The QDs remain after annealing when the total amount of supplied InAs is sufficiently large. The InAs QDs after capping exhibit efficient photoluminescence (PL) emission at around telecommunication wavelengths. We also observed PL emission from the 1 ML-thick two-dimensional InAs.