Scintillation Properties of In Doped ZnO With Different In Concentrations
Scintillation Properties of In Doped ZnO With Different In Concentrations
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DOI：
10.1109/tns.2009.2035120
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发表时间：
2010-06
影响因子：
1.8
通讯作者：
T. Yanagida;Y. Fujimoto;A. Yoshikawa;Y. Yokota;M. Miyamoto;H. Sekiwa;Jun Kobayashi;T. Tokutake;K. Kamada;S. Maeo
中科院分区：
文献类型：
--
作者：
T. Yanagida;Y. Fujimoto;A. Yoshikawa;Y. Yokota;M. Miyamoto;H. Sekiwa;Jun Kobayashi;T. Tokutake;K. Kamada;S. Maeo
采用液相外延（LPE）法制备了铟浓度为26、53和141 ppm的In3+掺杂ZnO薄膜闪烁体。我们评估了它们的光学性质和辐射响应，因为很少有关于掺杂ZnO闪烁体辐射响应的报道。为了模拟闪烁体的应用，我们测量了α射线激发的发光光谱。在375 nm和500 nm附近出现峰值，随着In3+的增加，两个波段的强度都降低。在光产率的测量中，我们通过硅脂将样品与PMT R7600光学耦合，并通过241Am 5.5 mev射线提供激发。样品显示，BGO闪烁体的产光率约为10%，可作为参考。在相同的激励下，测量了所有样品的闪烁衰减。
Using the liquid phase epitaxy (LPE) method we prepared the high crystalline quality In3+ doped ZnO thin film scintillators with different Indium concentration of 26, 53, and 141 ppm. We evaluated their optical properties and radiation response, because there are few reports of radiation response of In-doped ZnO scintillator. In order to imitate the scintillator application, we measured the alpha-ray excited luminescence spectra. The emission bands peaking around 375 and 500 nm were observed, and with an increment of In3+, the intensity of both bands decreases. In the measurement of light yield, we optically coupled the sample with PMT R7600 by a silicone grease, and excitation was provided by 241Am 5.5 MeV-rays. The samples showed of about 10% of the light yield of BGO scintillator which was used as a reference. Under the same excitation the scintillation decay was measured in all the samples as well.