Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding
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DOI：
10.1088/0256-307x/26/6/064211
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发表时间：
2009-06
影响因子：
3.5
通讯作者：
Chen Ting;Hong-shuai Tao;Pan Jiao-Qing;Chen Weixi;Cheng Yuan-bing;Wang Yang;Ma Xiao-Bo;Liu Weili;Zhao Lingjuan;Ran Guangzhao;Wang Wei;Qin Guogang
中科院分区：
文献类型：
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作者：
Chen Ting;Hong-shuai Tao;Pan Jiao-Qing;Chen Weixi;Cheng Yuan-bing;Wang Yang;Ma Xiao-Bo;Liu Weili;Zhao Lingjuan;Ran Guangzhao;Wang Wei;Qin Guogang
采用金属键合技术研制了脉冲InGaAsP-Si混合激光器。采用一种光学耦合和金属键合区横向分离的新型结构，将硅波导与InGaAsP多量子阱分布反馈结构集成在一起。在室温下电抽运时，激光器的阈值电流密度为2.9kA/cm(2)，斜率效率为0.02W/A。1542 nm激光输出主要来自硅波导。
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.