Power Factor Characterization of Ge/SiGe Thermoelectric Superlattices at 300 K
Power Factor Characterization of Ge/SiGe Thermoelectric Superlattices at 300 K
复制标题
300 K 下 Ge/SiGe 热电超晶格的功率因数表征
DOI：
--
复制
发表时间：
2013
影响因子：
2.1
通讯作者：
D. Paul
中科院分区：
文献类型：
--
作者：
A. Samarelli;L. F. Llin;Y. Zhang;J. Weaver;P. Dobson;S. Cecchi;D. Chrastina;G. Isella;T. Etzelstorfer;J. Stangl;E. M. Gubler;D. Paul
为了准确地表征热电材料的效率和它们可以产生的最大功率，开发了一种使用微/纳米加工技术的设备，使得能够使用单个设备来测量热电材料的优值系数ZT中包括的所有三种性能。给出了该器件的制作和测试结果。以低能等离子体增强化学气相沉积生长的Ge/SiGe异质结的电导率和Seebeck系数为例进行了验证。实验结果表明，在300K下，功率因数可达6.02M W/m−1和K−2。模拟和物理表征表明，这些结果目前受到高的线位错密度的限制。
To accurately characterize the efficiency of thermoelectric materials and characterize the maximum power that they can produce, a device using micro/nanofabrication techniques has been developed, enabling all three properties included in the figure of merit, ZT, of a thermoelectric material to be measured using a single device. The fabrication and testing of the device are presented. The electrical conductivity and Seebeck coefficient of Ge/SiGe heterostructures grown by low-energy plasma-enhanced chemical vapor deposition are used for demonstration. Experimental results as a function of quantum well width are presented, demonstrating power factors up to 6.02 ± 0.05 mW m−1 K−2 at 300 K. Modeling and physical characterization demonstrate that these results are presently limited by high threading dislocation density.