Analysis of the on-state resistance of photoconductive semiconductor switches in the non-linear mode
Analysis of the on-state resistance of photoconductive semiconductor switches in the non-linear mode
复制标题
DOI：
10.1109/tdei.2013.6571446
复制
发表时间：
2013-08
影响因子：
3.1
通讯作者：
Baojie Wang;Kefu Liu;J. Qiu
中科院分区：
文献类型：
--
作者：
Baojie Wang;Kefu Liu;J. Qiu
光电导半导体开关具有超快上升时间、低抖动、良好的同步性和高电场强度等优良性能，使其具有广阔的前景。在其他参数中，评估PCSS的导通电阻是非常重要的。本文研究了偏置电压、通态电流和触发位置对GaAs光导开关通态电阻的影响。我们从实验数据中提取了上述元素与导通电阻之间的关系。通态电阻随着偏置电压和通态电流的增加而减小。最佳触发位置被评价为在阴极上。导通电阻随着触发位置从阴极逐渐移向阳极而增大。本文对实验结果作了进一步的讨论。
Excellent performances such as ultrafast rise-time, low jitter, good synchronization and high electric-field strength make photoconductive semiconductor switches (PCSSs) have a wider prospect of application. Among other parameters, it is very important to evaluate the on-state resistance of the PCSS. In this paper, the influence of bias voltage, on-state current and trigger position on the on-state resistance of GaAs PCSS is described. We extracted the relationship between the elements mentioned above and the on-state resistance from our experimental data. The on-state resistance decreases with increasing bias voltage as well as increasing on-state current. The best trigger position was evaluated to be on the cathode. The on-state resistance increases as the trigger position shifts from cathode to anode gradually. The experimental results are further discussed in this paper.