Gate-tunable optical filter based on conducting oxide metasurface heterostructure.
Gate-tunable optical filter based on conducting oxide metasurface heterostructure.
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DOI：
10.1364/ol.44.003653
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发表时间：
2019-08
期刊：
影响因子：
3.6
通讯作者：
Jinqiannan Zhang;Jingyi Yang;M. Schell;A. Anopchenko;Long Tao;Zhongyuan Yu;H. W. Lee
中科院分区：
文献类型：
--
作者：
Jinqiannan Zhang;Jingyi Yang;M. Schell;A. Anopchenko;Long Tao;Zhongyuan Yu;H. W. Lee
提出了一种亚波长图案化金属-绝缘体-金属亚表面异质结构的栅调谐等离子光学滤光片。在绝缘层中嵌入额外的薄透明导电氧化物(TCO)层以形成双层金属氧化物半导体结构。采用重掺氮铟锡氧化物(ITO)作为TCO材料，其光学性质可以通过在ITO-氧化物界面形成一层薄的有源近零层来进行电调谐。全波电磁模拟表明，偏置电压为3-5V时，可以实现幅度调制和透射峰移位，具体取决于应用场合。此外，ITO层越薄，调制强度越大，透射峰漂移越大。这项工作是实现下一代紧凑型光子/等离子体集成器件的关键一步。
A gate-tunable plasmonic optical filter incorporating a subwavelength patterned metal-insulator-metal metasurface heterostructure is proposed. An additional thin transparent conducting oxide (TCO) layer is embedded in the insulator layer to form a double metal-oxide-semiconductor configuration. Heavily n-doped indium tin oxide (ITO) is employed as the TCO material, whose optical property can be electrically tuned by the formation of a thin active epsilon-near-zero layer at the ITO-oxide interfaces. Full-wave electromagnetic simulations show that amplitude modulation and shift of transmission peak are achievable with 3-5 V applied bias, depending on the application. Moreover, the modulation strength and transmission peak shift increase with a thinner ITO layer. This work is an essential step toward a realization of next-generation compact photonic/plasmonic integrated devices.