Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures
Plasma texturing for silicon solar cells: From pyramids to inverted pyramids-like structures
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DOI：
10.1016/j.solmat.2009.12.015
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发表时间：
2010-05-01
影响因子：
6.9
通讯作者：
Roca i Cabarrocas, P.
中科院分区：
文献类型：
--
作者：
Moreno, M.;Daineka, D.;Roca i Cabarrocas, P.
本文系统地研究了在反应离子蚀刻（RIE）系统中使用SF6/O-2等离子体对晶体硅晶片进行干燥和自由掩膜纹理化的工艺，特别关注了射频等离子体功率和SF6/O-2比对硅表面纹理的影响。特别是，我们发现通过增加射频功率，优化SF6/O-2比率和压力，可以从随机纹理切换到金字塔状纹理，最后切换到倒金字塔状纹理。这导致平均反射率值低至6%，这为晶体硅太阳能电池的应用开辟了一个令人兴奋的机会。(C) 2009 Elsevier B.V.版权所有
We have studied systematically a dry and free mask texturing process of crystalline silicon wafers using SF6/O-2 plasmas in a reactive ion etching (RIE) system, with special attention on the effect of the RF plasma power and the SF6/O-2 ratio on the texture of the silicon surface. In particular, we have found that by increasing the RF power, with an optimized SF6/O-2 ratio and pressure it is possible to switch from a random texture, to a pyramid-like texture and finally to an inverted pyramid-like texture. This resulted in average reflectance values as low as 6%, which open an exciting opportunity for crystalline silicon solar cells applications. (C) 2009 Elsevier B.V. All rights reserved.