MOVPE growth and real structure of vertical-aligned GaAs nanowires
MOVPE growth and real structure of vertical-aligned GaAs nanowires
复制标题
DOI：
10.1016/j.jcrysgro.2006.10.082
复制
发表时间：
2007-01-01
影响因子：
1.8
通讯作者：
Leipner, H. S.
中科院分区：
文献类型：
--
作者：
Bauer, J.;Gottschalch, V.;Leipner, H. S.
研究了衬底制备和生长条件对金属有机物气相外延制备GaAs纳米线的影响。研究了生长温度、前驱体分压和生长时间等生长参数。V/III比的明确选择使得NW长度增长与直径无关。通过研究GaAs-NW生长的时间演化，可以确定直径依赖的生长速率。利用纳米球光刻技术实现了GaAs纳米线阵列的有序排列。纳米线的形貌和真实的结构进行了研究，使用（高分辨率）透射电子显微镜和选区衍射。研究了GaAs纳米线中孪晶的形成。提出了一个晶体学模型。(c)2006 Elsevier B. V.保留所有权利。
We studied the influence of the substrate preparation and the growth conditions important to fabricate GaAs nanowires (NWs) with metal-organic vapor phase epitaxy. The growth parameters temperature, precursor partial pressures and growth duration were investigated. The definite choice of the V/III ratio enables NW length growth independent on the diameter. By investigating the temporal evolution of the GaAs-NW growth a diameter-dependent growth rate could be determined. Applying nanosphere lithography arranged GaAs-NW arrays were achieved. The NWs morphology and real structure was investigated using (high-resolution) transmission electron microscopy and selective area diffraction. The twin formation in GaAs NWs was investigated. A crystallographic model is presented. (c) 2006 Elsevier B.V. All rights reserved.