Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates
Preparation of lanthanide, thorium and uranium oxide films by chemical vapor deposition using β-diketone chelates
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β-二酮螯合物化学气相沉积法制备镧系、钍和铀氧化物薄膜
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
M. Yagi
中科院分区：
文献类型：
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作者：
Y. Shiokawa;R. Amano;A. Nomura;M. Yagi
以2，2，6，6-四甲基-3，5-庚二酮的β-二酮金属螯合物和一些反应气体为原料，用化学气相沉积（CVD）法制备了镧系元素、钍和铀的氧化物薄膜。沉积过程使用为CVD方法设计的特殊装置在大气压和低至400-600°C的温度下进行。结果表明，所使用的每种螯合物都非常适合于上述目的，因为其具有高挥发性和与反应物的反应性，特别是与水蒸气的反应性。
Preparation of thin film deposits of lanthanide, thorium and uranium oxides has been studied by chemical vapor deposition (CVD) method using β-diketonate metal chelates with 2,2,6,6-tetramethyl-3,5-heptanedione and some reactant gases as starting materials. The deposition process was carried out using a special apparatus designed for the CVD method at atmospheric pressure and temperatures as low as 400–600°C.As a result, it was demonstrated that each chelate used was well suited for the above purpose by its high volatility and reactivity with the reactant, especially with water vapor.