Electrical Resistivity of Antiferromagnetic Metals
Electrical Resistivity of Antiferromagnetic Metals
复制标题
反铁磁金属的电阻率
DOI：
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发表时间：
1977
期刊：
影响因子：
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通讯作者：
K. Ueda
中科院分区：
文献类型：
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作者：
K. Ueda
在双带模型的基础上讨论了反铁磁性金属的电阻率。得到了动力磁化率的一般表达式。利用自旋涨落的自洽重整化理论对电阻率进行了研究。低温电阻率与t2成正比，当接近反铁磁性临界边界时，其系数呈|α-1| -1/2发散。指出在有序相中，导带间隙的影响是重要的。特别是，这种效应在自旋波贡献的温度依赖性中起着至关重要的作用。它分别与温度较低和较高时的t5和t2成正比，而不是与间隙能成正比。在高温下，电阻率与使用自旋波动的RPA结果计算的电阻率相比显着降低，并且可能趋于饱和。
The electrical resistivity of antiferromagnetic metals is discussed on the basis of the two band model. The general expression in terms of the dynamical susceptibility is obtained. The resistivity is studied by using the self-consistent renormalization theory of spin fluctuations. The resistivity at low temperatures is proportional to T 2 and its coefficient diverges as |α-1| -1/2 as one approaches the critical boundary of antiferromagnetism. It is pointed out that in the ordered phase the effect of the gap in the conduction band is important. Especially, this effect plays a crucial role in the temperature dependence of the contribution of the spin waves. It is proportional to T 5 and T 2 at the temperatures lower and higher, respectively, than the gap energy. At high temperatures the resistivity is significantly suppressed from that calculated by using RPA results for the spin fluctuations and can have a tendency towards saturation.