Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals
Synthesis and optoelectronic properties of Cu3VSe4 nanocrystals
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DOI：
10.1371/journal.pone.0232184
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发表时间：
2020-05-05
期刊：
影响因子：
3.7
通讯作者：
Radu, Daniela R.
中科院分区：
文献类型：
--
作者：
Liu, Mimi;Lai, Cheng-Yu;Radu, Daniela R.
硫酸盐结构的三元硫化物Cu3VSe4(CVSe)具有合适的吸收带隙和相对丰富的稀土元素，在理论上被认为是一种很有前途的光伏应用候选材料。为了通过廉价的途径实现吸收层，可以用纳米Cu3VSe4前驱体的分散体来制备印刷薄膜。本文采用热注射法制备了立方相Cu3VSe4纳米晶。与已报道的Cu3VS4纳米晶相似，立方结构的Cu3VSe4纳米晶在紫外可见光区有三个吸收带，表明可能存在中间禁带。通过在FTO镀膜玻璃衬底上沉积纳米Cu3VSe4制备的薄膜表现出p型行为，在电化学池中测量的光电流类似于4mA/cm(2)。首次展示了CVSe纳米晶体薄膜的光电流，这意味着在光伏应用中有很大的潜力。
The ternary chalcogenide Cu3VSe4 (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable bandgap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu3VSe4 precursors. Herein, cubic Cu3VSe4 nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu3VS4 nanocrystals, Cu3VSe4 nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu3VSe4 on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of similar to 4 mu A/cm(2) when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.