Infrared optical properties of SiO2 films on silicon substrate under different temperatures
Infrared optical properties of SiO2 films on silicon substrate under different temperatures
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DOI：
10.1117/1.oe.61.3.031204
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发表时间：
2021-11
影响因子：
1.3
通讯作者：
Yugang Jiang;Hua-song Liu;Jinlin Bai;Ziyang Li;Xiao Yang;D. Chen;Jiahuan He;Lishuan Wang;Dan-dan Liu
中科院分区：
文献类型：
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作者：
Yugang Jiang;Hua-song Liu;Jinlin Bai;Ziyang Li;Xiao Yang;D. Chen;Jiahuan He;Lishuan Wang;Dan-dan Liu
抽象的。二氧化硅是一种非常重要的低折射率薄膜材料，可以工作在紫外区到中红外区。所用的SiO_2薄膜是通过不同的沉积技术在硅衬底上沉积的。设计制作了与傅里叶变换红外光谱仪相连接的高温红外光谱测量装置；在40 0 0~40 0 cm−1波数范围内测量了不同工作温度下SiO_2薄膜的傅里叶变换红外透射谱。从测量的光谱可以看出，IBS-SiO_2和IAD-SiO_2薄膜较稳定，工作温度可达400℃，EB-SiO_2薄膜较差，工作温度仅为300℃。结果表明，IBS-SiO_2薄膜中的Si-O-Si网络结构是最稳定的结构。实验结果对实际应用具有重要意义。
Abstract. SiO2 is a very important low refractive index film material that can operate in the UV to mid-IR regions. The SiO2 films used were deposited on Si substrates by different deposition techniques. We designed and manufactured a high-temperature infrared spectrum measuring equipment connected with a Fourier transform infrared (FTIR) spectrometer; the measuring temperature could range from room-temperature to 600°C. The FTIR transmission spectra of SiO2 films under different working temperatures were measured in the wavenumber region from 4000 to 400 cm − 1. From the measured spectra, it can be seen that IBS-SiO2 and IAD-SiO2 films are more stable and operating temperature can reach 400°C. EB-SiO2 film is worse and operating temperature is only 300°C. Complex dielectric functions of SiO2 films under different temperature conditions were calculated from FTIR transmittance spectra, and the best fitted method was obtained for calculating optical constants of dielectric materials in the high temperature condition. The results show that the structure of the Si-O-Si network in IBS-SiO2 films was the most stable structure. The experimental results were of great significance to practical application.