Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes
Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes
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DOI：
10.1063/1.4798323
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发表时间：
2013-03
影响因子：
4
通讯作者：
P. Roth
中科院分区：
文献类型：
--
作者：
P. Roth
本文报道了基于实验和自洽计算的GaN基半导体激光器中与受激发射相关的电学参量反常行为。特别地，跨有源区的电子和空穴的准费米能级的分离示出了阈值区中的下降（或“钉扎”），随后是随电流的增加。起点和终点对应于光输出功率-电流（P-I）曲线的一阶导数的两个扭结点。这种电参数的异常变化总是能满足激光跃迁和激光增强过程中受激发射所需的足够载流子。
We report the stimulated emission related anomalous behavior of electrical parameters in GaN-based laser diodes based on both experiments and self-consistent calculations. In particular, the separation of quasi-Fermi levels of electrons and holes across active region shows a drop (or “pinning”) in threshold region, followed by an increase with current. The start and end points correspond to the two kink points of the first derivative of the optical output power-current (P-I) curve. This abnormal change of electrical parameters always satisfies the need of sufficient carriers for stimulated emission in the process of transition to lasing as well as lasing enhancement.