Doping of polycrystalline silicon films using an arsenic spin‐on‐glass source and surface smoothness
Doping of polycrystalline silicon films using an arsenic spin‐on‐glass source and surface smoothness
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使用砷旋涂玻璃源掺杂多晶硅薄膜和表面光滑度
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
E. Kvam
中科院分区：
文献类型：
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作者：
R. Bashir;S. Venkatesan;H. Yen;G. Neudeck;E. Kvam
在本简介中，首次描述了从市售砷旋涂玻璃（SOG）源掺杂多晶硅。结果表明，砷SOG源提供低的薄层电阻率的多晶硅薄膜，可用作栅极和接触。此外，当与掺杂有来自POCl 3源的磷的膜相比时，掺杂有砷SOG并暴露于氧化步骤的多晶硅膜表现出降低的顶部表面粗糙度。使多氧化物的顶表面粗糙度最小化对于其用作先进三维互补金属氧化物半导体（CMOS）中的栅极绝缘体以及用作BiCMOS双极结型晶体管器件中的侧壁接触是重要的。
In this brief, the doping of polycrystalline silicon from a commercially available arsenic spin‐on glass (SOG) source is described for the first time. It is shown that the arsenic SOG source provides low sheet resistivities in thin polycrystalline silicon films which can be used as gates and contacts. In addition, the polycrystalline silicon films doped with arsenic SOG and exposed to an oxidation step exhibit reduced top surface roughness when compared to films doped with phosphorus from a POCl3 source. The minimization of the top surface roughness of the polyoxide is important for its use as a gate insulator in advanced three‐dimensional complementary metal–oxide–semiconductor (CMOS) and as a sidewall contact in BiCMOS bipolar junction transistor devices.