Concentration broadening of bound-exciton spectral lines
Concentration broadening of bound-exciton spectral lines
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束缚激子谱线的浓度展宽
DOI：
10.1103/physrevb.21.3581
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发表时间：
1980
期刊：
影响因子：
--
通讯作者：
T. C. Mcgill
中科院分区：
文献类型：
--
作者：
D. Pan;D. Smith;T. C. Mcgill
本文报道了硅中浅受主在高杂质浓度下束缚激子谱线展宽的研究结果。加宽主要是由于波函数的重叠的效果，并考虑到占主导地位的二元相互作用计算。计算的BE光谱中的非简并分量的光谱形状被发现是不对称的。我们发现，展宽是强烈依赖于杂质浓度。计算的半峰全宽在5× 10 17 cm− 3浓度下约为1 meV，在5× 10 16 cm− 3浓度下小于0.01 meV。
We report on an investigation of the broadening of bound exciton (BE) spectral lines at high impurity concentration for shallow acceptors in Si. The broadening is mainly due to the effect of overlapping of wave functions and is calculated by taking account of the dominant binary interaction. The calculated spectral shape for a nondegenerate component in the BE spectra is found to be asymmetric. We find the broadening is strongly dependent on the impurity concentration. The calculated full width at half maximum is about 1 meV for a concentration of 5× 10 17 cm− 3 and is less than 0.01 meV for concentrations below 5× 10 16 cm− 3.