Prototype of single-event effect localization system with CMOS pixel sensor
Prototype of single-event effect localization system with CMOS pixel sensor
复制标题
带有 CMOS 像素传感器的单粒子效应定位系统原型
DOI：
10.1007/s41365-022-01128-5
复制
发表时间：
2022-11-01
影响因子：
2.8
通讯作者：
Wang, Min
中科院分区：
文献类型：
--
作者：
Liu, Jun;Zhou, Zhuo;Wang, Min
单粒子效应（SEE）是辐射环境中电子器件的严重威胁。辐射加固研究中最重要的问题是电子学中敏感区域对SEE的定位。为了解决这个问题，基于互补金属氧化物半导体（CMOS）像素传感器的原型，即，Topmetal-M是为SEE定位而设计的。在兰州重离子加速器（HIRFL）的辐射终端对样机进行了束流测试。结果表明，样机对光束的固有偏转角为1.7 °，角分辨率为0.6。原型定位重离子的位置分辨率为3.4米。
The single-event effect (SEE) is a serious threat to electronics in radiation environments. The most important issue in radiation-hardening studies is the localization of the sensitive region in electronics to the SEE. To solve this problem, a prototype based on a complementary metal oxide semiconductor (CMOS) pixel sensor, i.e., Topmetal-M, was designed for SEE localization. A beam test was performed on the prototype at the radiation terminal of the Heavy Ion Research Facility in Lanzhou (HIRFL). The results indicated that the inherent deflection angle of the prototype to the beam was 1.7, and the angular resolution was 0.6. The prototype localized heavy ions with a position resolution of 3.4m.