Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes
Novel Temperature-Dependent Junction Characteristics of Poly(3-alkylthiophene) Schottky Diodes
复制标题
聚（3-烷基噻吩）肖特基二极管的新型温度依赖性结特性
DOI：
10.1143/jjap.29.l837
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
K. Yoshino
中科院分区：
文献类型：
--
作者：
Y. Ohmori;Y. Manda;H. Takahashi;T. Kawai;K. Yoshino
研究了聚(3-烷基噻吩基)与金属界面的电学特性。用真空蒸镀在聚(3-烷基噻吩基)膜上的铝电极和金锡电极制备了良好的肖特基二极管。对于聚(3-烷基硫代苯基)肖特基二极管，观察到明显的温度依赖性，并用温度相关的电子能带方案进行了讨论。
Electrical characteristics of poly(3-alkylthiophene) and metal interfaces have been studied. Good Schottky type diodes have been fabricated using aluminum and gold-tin electrodes vacuum-evaporated onto poly(3-alkylthiophene) films. Markedly large temperature dependences are observed for poly(3-alkylthio-phene) Schottky diodes and discussed in terms of a temperature-dependent electronic band scheme.