Fabrication, characterization, and analysis of a DRIE CMOS-MEMS Gyroscope
Fabrication, characterization, and analysis of a DRIE CMOS-MEMS Gyroscope
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DOI：
10.1109/jsen.2003.817901
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发表时间：
2003-10-01
影响因子：
4.3
通讯作者：
Fedder, GK
中科院分区：
文献类型：
--
作者：
Xie, HK;Fedder, GK
采用CMOS后微加工工艺，利用互连金属层掩模结构刻蚀步骤，制作了一个陀螺仪，在5 Hz时，测量噪声基底为0.02degrees/s/Hz（1/2）。1 x 1 mm横向轴角速率传感器采用面内振动和面外科里奥利加速度检测，并采用片内CMOS电路。所得到的设备结合了1.8 μ m厚的薄膜结构的弹簧与平面外的顺应性和60 μ m厚的体硅结构的深度反应离子蚀刻定义的检验质量和弹簧与平面外的刚度。微结构是平坦的，并且避免了现有薄膜CMOS微机电系统陀螺仪中存在的过度卷曲。选择性硅区域的完全蚀刻去除提供了体硅的电隔离，以获得单独可控的梳齿。对直接运动耦合进行了观察和分析。
A gyroscope with a measured noise floor of 0.02degrees/s/Hz(1/2) at 5 Hz is fabricated by post-CMOS micromachining that uses interconnect metal layers to mask the structural etch steps. The 1 x 1 mm lateral-axis angular rate sensor employs in-plane vibration and out-of-plane Coriolis acceleration detection with on-chip CMOS circuitry. The resultant device incorporates a combination of 1.8-mum-thick thin-film structures for springs with out-of-plane compliance and 60-mum-thick bulk silicon structures defined by deep reactive-ion etching for the proof mass and springs with out-of-plane stiffness. The microstructure is flat and avoids excessive curling, which exists in prior thin-film CMOS-microelectromechanical systems gyroscopes. Complete etch removal of selective silicon regions provides electrical isolation of bulk silicon to obtain individually controllable comb fingers. Direct motion coupling is observed and analyzed.