InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding
InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding
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DOI：
10.1109/jstqe.2019.2915924
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发表时间：
2019-11-01
影响因子：
4.9
通讯作者：
Moselund, Kirsten Emilie
中科院分区：
文献类型：
--
作者：
Mauthe, Svenja;Trivino, Noelia Vico;Moselund, Kirsten Emilie
片上光源是光子集成电路和光通信的关键器件。在本文中，我们使用一种称为模板辅助选择性外延（TASE）的新型集成技术将InP微磁盘激光器单片集成在硅上。TASE为新器件概念提供了几个优势，例如横向掺杂，不同III-V材料的密集协整，以及与硅电子元件和无源元件的平面内集成。在这里，我们演示了通过TASE集成的InP六边形微盘的室温激光。为了评估和评价TASE的可行性，利用高度发达和成熟的直接晶圆键合技术制备了第二个InP六边形微盘样品进行比较。研究了脉冲光泵浦下TASE单片器件和键合微盘器件的激光性能随温度的变化规律，并进行了比较。我们的TASE结构的激光阈值以及光入光灭曲线与键合的InP六边形微盘相比较具有优势。这表明我们的TASE方法是一种很有前途的技术，用于光学器件在Si上的单片集成。
On-chip optical light sources are key components in photonic integrated circuits and optical communication. In this paper, we use a novel integration technique called template-assisted selective epitaxy (TASE) to monolithically integrate InP microdisk lasers on silicon. TASE offers several advantages for new device concepts such as lateral doping, dense co-integration of different III-V materials, and in-plane integration with silicon electronics and passive components. Here, we demonstrate room-temperature lasing from InP hexagonal microdisks integrated via TASE. In order to assess and evaluate the viability of TASE, a second InP hexagonal microdisk sample is prepared for comparison using the highly developed and mature direct wafer bonding technique. The lasing performance of the TASE monolithic devices and the bonded microdisk devices is investigated under pulsed optical pumping as a function of temperature and compared. The lasing threshold as well as the light-in light-out curves of our TASE structures compare favorably with the bonded InP hexagonal microdisks. This demonstrates that our TASE approach is a promising technique for the monolithic integration of optical devices on Si.