Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)
Preferential ordering of self-assembled Ge islands on focused ion-beam patterned Si(100)
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DOI：
10.1007/s11051-012-0725-8
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发表时间：
2012-01
影响因子：
2.5
通讯作者：
K. Das;S. Das;R. Singha;S. Ray;A. Raychaudhuri
中科院分区：
文献类型：
--
作者：
K. Das;S. Das;R. Singha;S. Ray;A. Raychaudhuri
我们报道了利用聚焦离子束图案化和分子束外延在具有光刻定义的二维周期性凹坑的Si(001)衬底上生长Ge岛。通过离子轰击空穴周围的非均匀应变场，实现了环形有序Ge岛的形成。Ge岛的横向有序性受到凹坑大小和凹坑间距的控制。通过使用适当的图案形状和大小，也实现了在坑点的优先生长。
We report the growth of Ge islands on Si (001) substrates with lithographically defined two-dimensionally periodic pits using focused ion-beam patterning and molecular beam epitaxy. The formation of circularly ordered Ge islands has been achieved by means of nonuniform strain field around the periphery of the holes due to ion bombardment. Lateral ordering of the Ge islands have been controlled by both the pit size and pit separation. Preferential growth at the pit sites has also been achieved by using appropriate pattern shape and size.