High frequency switching of power MOSFETs

High frequency switching of power MOSFETs
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功率 MOSFET 的高频开关

DOI：
10.1109/pesc.1989.48490
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发表时间：
1988
期刊：
20th Annual IEEE Power Electronics Specialists Conference
影响因子：
--
通讯作者：
L. Hobson
L. Hobson
中科院分区：
--
文献类型：
--
作者：
S. Hinchliffe;L. Hobson

文献摘要

被引文献

相似文献

研究了源极电感对功率MOSFET开关特性的影响。T03封装中的IRF 450被修改为包括用于驱动目的的第二源极引线。还对电流发送FET和RF封装功率MOSFET进行了开关测试。结果进行了比较，并与高频功率放大器的应用。故障模式也进行了讨论。&lt;<ETX>&gt;
The effect of source inductance on the switching performance of power MOSFETs has been investigated. An IRF 450 in a T03 package was modified to include a second source lead for drive purposes. Switching tests have also been carried out on current-sending FETs and RF packaged power MOSFETs. The results are compared and related to high-frequency power convertor applications. Failure modes are also discussed.<<ETX>>