Atmospheric He/O2 plasma jet fine etching with a scanning probe microscope
Atmospheric He/O2 plasma jet fine etching with a scanning probe microscope
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DOI：
10.1063/5.0017952
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发表时间：
2020-09
期刊：
影响因子：
1.6
通讯作者：
K. Nakazawa;Shotaro Yamamoto;E. Nakagawa;A. Ogino;M. Shimomura;F. Iwata
中科院分区：
文献类型：
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作者：
K. Nakazawa;Shotaro Yamamoto;E. Nakagawa;A. Ogino;M. Shimomura;F. Iwata
在这项研究中，我们研究了在扫描探针显微镜（SPM）的辅助下，利用He/O2大气压等离子体射流（APPJ）进行无掩膜精细刻蚀的技术。APPJ被纳米吸管定位在亚微米范围内，纳米吸管也被用作SPM的探针。我们通过在He源气体中加入O2气体来提高亚微米级蚀刻的速率。在聚甲基丙烯酸甲酯薄膜上，典型蚀刻点的深度为475 nm，最大半宽为235 nm。发现加入气体后蚀刻速度比没有加入气体时快6倍。我们还演示了线条图案；该线的宽度为281 nm。
In this study, we investigate a maskless fine etching technology using a He/O2 atmospheric pressure plasma jet (APPJ) assisted by a scanning probe microscope (SPM). The APPJ is localized in the submicrometer range by a nanopipette, which is also used as the probe of the SPM. We improve the rate of submicrometer-scale etching by adding O2 gas to the He source gas. The depth and full width at half maximum of a typical etched dot on a polymethylmethacrylate film were 475 nm and 235 nm, respectively. The etching rate was found to be six times faster with the added gas than without it. We also demonstrate line patterning; the width of the line was found to be 281 nm.