Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory
Total Ionizing Dose Effects on the Power-Up State of Static Random-Access Memory
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DOI：
10.1109/tns.2023.3236625
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发表时间：
2023-04
影响因子：
1.8
通讯作者：
U. Surendranathan;Horace Wilson;M. Wasiolek;K. Hattar;A. Milenković;B. Ray
中科院分区：
文献类型：
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作者：
U. Surendranathan;Horace Wilson;M. Wasiolek;K. Hattar;A. Milenković;B. Ray
静态随机存取存储器（SRAM）的上电状态通常用于在各种集成电路中产生物理不可克隆函数（puf）。在辐射易发的环境中，来自商用SRAM存储器的puf的完整性最近被认为是一个重要的问题，它仍然是一个悬而未决的问题。我们进行了实验评估和模拟分析，以量化辐照对商用SRAM芯片上电状态的影响。我们的研究结果表明，SRAM-PUF在辐照后发生显著改变，从而限制了其在辐射易发环境中的使用。SRAM-PUF误码率（BER）随总电离剂量（TID）的增加而单调增加，在100 krad（Si）后超过15%。随着时间的推移，我们观察到小的退火效应，但即使在辐照后5个月，BER仍然很高。
Power-up states of static random-access memory (SRAM) memories are often used for generating physical unclonable functions (PUFs) in a variety of integrated circuits. The integrity of PUFs derived from commercial SRAM memories in radiation-prone environments has been recently recognized as an important problem and it remains an open issue. We perform both experimental evaluation and simulation analysis to quantify the effects of irradiation on the power-up state of commercial SRAM chips. Our results show that SRAM-PUF is significantly altered after irradiation, thus limiting its use in radiation-prone environments. The SRAM-PUF bit error rate (BER) increases monotonically with an increase in the total ionizing dose (TID), exceeding 15% after 100 krad(Si). We observe small annealing effects over time, but the BER remains high even five months after irradiation.