SPICE Model of Memristor with Nonlinear Dopant Drift
SPICE Model of Memristor with Nonlinear Dopant Drift
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DOI：
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发表时间：
2009-06
期刊：
影响因子：
1.1
通讯作者：
D. Biolek;V. Biolková;Zdeněk Biolek
中科院分区：
文献类型：
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作者：
D. Biolek;V. Biolková;Zdeněk Biolek
本文描述了2008年惠普实验室制造的忆阻器原型的数学模型。研究表明，迄今为止已发表的边界条件建模方法可能不符合实际电路元件的行为要求。因此，所描述的忆阻器SPICE模型被构建为一个开放模型，能够对非线性边界条件进行额外修改。其功能通过计算机模拟进行了说明。
A mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, enabling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.