Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process
Fabrication of metal nanowires by atomic force microscopy nanoscratching and lift-off process
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DOI：
10.1088/0957-4484/16/8/020
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发表时间：
2005-08-01
期刊：
影响因子：
3.5
通讯作者：
Lin, HN
中科院分区：
文献类型：
--
作者：
Chen, YJ;Hsu, JH;Lin, HN
报道了一种利用原子力显微镜在单层抗蚀剂上刻划和剥离相结合的方法制备金属纳米线。各种金属纳米线，包括Au，Cu，Ni，Al和Ti，宽度小至50 nm的成功创建。纳米线的电导率也已获得，并发现是在良好的协议与报道的结果。
A convenient method for the fabrication of metal nanowires by a combination of atomic force microscopy nanoscratching on a single-layer resist and lift-off process is reported. Various metal nanowires, including Au, Cu, Ni, Al, and Ti, with widths as small as 50 nm are successfully created. The electrical resistivities of the nanowires have also been obtained and found to be in good agreement with reported results.