GaAs/AlGaAs HEMT structures with multiquantum well channels
GaAs/AlGaAs HEMT structures with multiquantum well channels
复制标题
具有多量子阱通道的 GaAs/AlGaAs HEMT 结构
DOI：
10.1049/el:19910644
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发表时间：
1991
影响因子：
1.1
通讯作者：
G. Weimann
中科院分区：
文献类型：
--
作者：
T. Humer‐Hager;W. Klein;R. Kempter;G. Böhm;G. Tränkle;G. Weimann
给出了具有3个平行导电量子阱的1µm栅长HEMT的直流特性。通过改变栅极电压，三个沟道可以连续导通，导致器件跨导出现三个单独的峰值。通过优化栅极凹陷的深度，作者制造出了具有良好输出特性和高达1100 mA/mm的极高最大漏电流的晶体管。
The DC performance of 1 mu m gate length HEMTs with three parallel conducting GaAs quantum wells is presented. By variation of the gate voltage the three channels can be switched on successively, leading to three separate peaks in the device transconductance. By optimising the depth of the gate recess the authors fabricated transistors which exhibit good output characteristics and extremely high maximum drain currents of up to 1100 mA/mm.