Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes
Analysis of phonon assistance as a function of temperature in inter-band tunneling in 2D Si lateral Esaki diodes
复制标题
二维 Si 横向 Esaki 二极管带间隧道中声子辅助随温度变化的分析
DOI:
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发表时间:
2016
期刊:
影响因子:
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通讯作者:
M.Tabe
中科院分区:
文献类型:
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作者:
D.Moraru;M.Shibuya;R.Nuryadi;M.Hori;Y.Ono;M.Tabe