Erbium–Silicon–Oxide crystalline films prepared by MOMBE
Erbium–Silicon–Oxide crystalline films prepared by MOMBE
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DOI：
10.1016/j.optmat.2004.08.027
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发表时间：
2005-02
影响因子：
3.9
通讯作者：
K. Masaki;H. Isshiki;T. Kimura
中科院分区：
文献类型：
--
作者：
K. Masaki;H. Isshiki;T. Kimura
采用金属有机分子束外延（MOMBE）技术在硅衬底上制备Er-Si-O晶体薄膜。分别以四乙氧基硅烷（TEOS）和三-2，2，6，6-四甲基-3，5-辛烷二酮铒（Er（TMOD）3）为Si-O和Er-O前驱体。Er-Si-O薄膜主要在退火过程中晶化，形成一种新型的硅酸铒晶体化合物，这是迄今未见报道的。制备的薄膜中Er：Si：O的原子分数为3：2：8。与Er ~（3+）有关的PL谱显示出精细的结构，在20 K时线宽小于1 meV，在室温时线宽小于4 meV。窄线宽是由于晶体性质。此外，在这些Er-Si-O薄膜中观察到的PL谱精细结构再现了Isshiki等人报道的湿化学法制备的Er-Si-O微晶中观察到的精细结构，证明了本文提出的方法是制备Er-Si-O微晶薄膜的有效方法。
Er–Si–O crystalline thin film preparation on silicon substrates by using metal organic molecular beam epitaxy (MOMBE) is proposed. Tetra ethoxy silane (TEOS) and tris-2,2,6,6-tetra methyl-3,5-octane dionato erbium (Er(TMOD)3) were used as Si–O and Er–O precursors, respectively. The Er–Si–O thin film crystallizes mainly during the post-annealing process and into a novel type of erbium-silicate crystalline compounds, which have not ever been reported. The atomic fraction of Er:Si:O in the prepared thin film is 3:2:8. The Er3+related PL spectra show a fine structure with a line width of less than 1meV at 20K and 4meV at room temperature. The narrow line width is due to the crystalline nature. In addition, the PL spectrum fine structure observed in these Er–Si–O films has reproduced the fine structure observed in Er–Si–O crystallites prepared by the wet-chemical method reported by Isshiki et al. The present results have proved that the method proposed in this paper is effective to form Er–Si–O crystalline films.