Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films
Fourier transform infrared spectroscopy of annealed silicon-rich silicon nitride thin films
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DOI：
10.1063/1.3021158
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发表时间：
2008-11-15
影响因子：
3.2
通讯作者：
Green, M. A.
中科院分区：
文献类型：
--
作者：
Scardera, G.;Puzzer, T.;Green, M. A.
富硅氮化硅薄膜中的键合变化之间的相关性，在N-2环境下进行高温退火，和硅纳米晶的形成。富硅氮化硅薄膜的傅里叶变换红外（FTIR）光谱在1000和1100 cm（-1）之间的肩部的退火后外观归因于薄膜中的重新排序朝向由硅纳米晶体的沉淀导致的增加的SiN 4键合构型。FTIR监测这些膜中的键合变化允许间接验证硅微结构的形成。
A correlation between bonding changes in silicon-rich silicon nitride films, subjected to high temperature annealing under N-2 ambient, and the formation of silicon nanocrystals is presented. The postannealing appearance of a shoulder between 1000 and 1100 cm(-1) in the Fourier transform infrared (FTIR) spectra of silicon-rich silicon nitride films is attributed to a reordering in the films toward an increased SiN4 bonding configuration resulting from the precipitation of silicon nanocrystals. The FTIR monitoring of bonding changes in these films allows for the indirect verification of silicon nanocrystal formation.