Highly ordered growth of PTCDA on epitaxial bilayer graphene
Highly ordered growth of PTCDA on epitaxial bilayer graphene
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DOI：
10.1016/j.susc.2012.07.016
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发表时间：
2012-11-01
期刊：
影响因子：
1.9
通讯作者：
Fritz, Torsten
中科院分区：
文献类型：
--
作者：
Meissner, Matthias;Gruenewald, Marco;Fritz, Torsten
为了在未来的纳米电子器件中使用石墨烯的独特电子性质，控制能带结构是必不可少的。虽然已经在文献中表明，这可以通过沉积有机分子来实现，但迄今为止很少注意界面的精确结构表征。在这里，我们报告的3，4，9，10-二萘嵌苯四甲酸二酐（PTCDA）层上的石墨烯，碳化硅（SiC）上外延生长的外延生长。本文回顾了多次散射法对石墨烯在SiC上的低能电子衍射（LEED）图样的描述。通过一个自制的算法来校正LEED图像的径向失真，我们能够提供精确的PTCDA层的结构数据。由此，可以识别两种不同的点在线类型的PTCDA，其中一种之前在石墨或石墨烯上都没有报道过。(c)2012 Elsevier B. V.保留所有权利。
For using the unique electronic properties of graphene in future nanoelectronic devices, control of the band structure is essential. While it has been shown already in the literature that this can be achieved by the deposition of organic molecules, little attention has been paid so far to the precise structural characterization of the interface. Here, we report on the epitaxial growth of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) layers on graphene, epitaxially grown on silicon carbide (SiC). The description of low energy electron diffraction (LEED) patterns of graphene on SiC by multiscattering is revisited. By means of a home-made algorithm used to correct radial distortions of the LEED images we are able to provide precise structural data of the PTCDA layers. By that, two different point-on-line types of PTCDA could be identified, one of which has neither been reported on graphite nor on graphene before. (c) 2012 Elsevier B.V. All rights reserved.