Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells
Refractive index modulation based on excitonic effects in GaInAs-InP coupled asymmetric quantum wells
复制标题
基于GaInAs-InP耦合不对称量子阱激子效应的折射率调制
DOI：
10.1109/3.387034
复制
发表时间：
1995
影响因子：
2.5
通讯作者：
C. Thirstrup
中科院分区：
文献类型：
--
作者：
C. Thirstrup
采用基于有效质量近似的模型，数值分析了GaInAs-InP耦合非对称量子阱威尔斯中激子对折射率调制的影响。结果表明，两个耦合的量子威尔斯井所带来的共振由一个外加电场，由于激子振子强度的减少，有一个调制的折射率是一个以上的数量级大于在一个类似的量子阱结构的基础上的量子限制斯塔克效应，但没有耦合的量子威尔斯。计算表明，在偏置PIN二极管调制器结构中，将这种强的电致折射效应与自光致调制相结合，在波长为1.55 /spl μ/m时，可获得品质因数为20 cm/sup 3/J的光学非线性。与源于III-V族半导体材料中的带边共振效应的光学非线性相比，该值较大。>
The effect of excitons in GaInAs-InP coupled asymmetric quantum wells on the refractive index modulation, is analyzed numerically using a model based on the effective mass approximation. It is shown that two coupled quantum wells brought in resonance by an applied electric field will, due to the reduction in the exciton oscillator strengths, have a modulation of the refractive index which is more than one order of magnitude larger than in a similar quantum well structure based on the quantum confined Stark effect, but with no coupling between the quantum wells. Calculations show that combining this strong electrorefractive effect with self-photo-induced modulation in a biased-pin-diode modulator configuration, results in an optical nonlinearity with a figure of merit of 20 cm/sup 3//J at a wavelength of 1.55 /spl mu/m. This value is large compared to optical nonlinearities originating from band edge resonance effects in III-V semiconductor materials. >