Laser-Induced-Fluorescence Study of the SiH2 Density in RF SiH4 Plasmas with Xe, Ar, He, and H2 Dilution Gases
Laser-Induced-Fluorescence Study of the SiH2 Density in RF SiH4 Plasmas with Xe, Ar, He, and H2 Dilution Gases
复制标题
使用 Xe、Ar、He 和 H2 稀释气体对 RF SiH4 等离子体中的 SiH2 密度进行激光诱导荧光研究
DOI：
10.1143/jjap.34.307
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发表时间：
1995
影响因子：
1.5
通讯作者：
Toshio Goto Toshio Goto
中科院分区：
文献类型：
--
作者：
A. Kono;N. Koike;H. Nomura;Toshio Goto Toshio Goto
用激光诱导荧光光谱法测量了平行板射频（13.56MHz）放电条件下硅烷（SiH 4）气体中硅烯（SiH 2）的密度。在总气压为40 mTorr的条件下，研究了SiH 2、Ar、He和H2稀释气体对SiH 2密度的影响。在所有稀释情况下，SiH 2密度对混合物中SiH 4分数（x）（x\gtrsim 0.5）相对不敏感;然而，除了H2稀释情况外，随着x的降低（x\lesssim 0.5），观察到SiH 2密度显著增加。SiH 2的生产和损失机制进行了讨论所观察到的SiH 2密度和补充的光发射测量的基础上。结果表明，在高稀释（x\lesssim0.1）SiH 4/Ar和SiH 4/Ar混合物中，SiH 2的产生主要是通过激发态Ar和Ar原子向SiH 4的能量转移，而不是直接电子碰撞解离SiH 4.
The silylene ( SiH2) density in a parallel-plate RF (13.56 MHz) discharge using monosilane ( SiH4) gas has been measured by using laser-induced fluorescence spectroscopy. The effect of Xe, Ar, He and H2 dilution gases on the SiH2 density was investigated at a total gas pressure of 40 mTorr. In all dilution cases, the SiH2 density was relatively insensitive to the SiH4 fraction (x) in the mixtures for x\gtrsim0.5; however, except in the case of H2 dilution, marked increase of the SiH2 density was observed with decreasing x for x\lesssim0.5. The production and loss mechanisms for SiH2 are discussed on the basis of the observed SiH2 density and supplementary optical emission measurements. The results indicate that, in highly diluted ( x\lesssim0.1)SiH4/Xe and SiH4/Ar mixtures, the production of SiH2 via energy transfer from excited Xe and Ar atoms to SiH4 is dominant over direct electron impact dissociation of SiH4.