Effects of interfacial wettability on arc erosion behavior of Zn2SnO4/Cu electrical contacts
Effects of interfacial wettability on arc erosion behavior of Zn2SnO4/Cu electrical contacts
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界面润湿性对Zn2SnO4/Cu电触头电弧烧蚀行为的影响
DOI：
10.1016/j.jmst.2021.08.045
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发表时间：
2022-05-20
影响因子：
10.9
通讯作者：
Shao, Wen-Zhu
中科院分区：
文献类型：
--
作者：
Li, Wei-Jian;Chen, Zi-Yao;Shao, Wen-Zhu
界面润湿性直接影响氧化物/铜基复合材料在电弧侵蚀下的电接触特性。探索其影响机制，特别是在原子/电子尺度上，是重要的，但具有挑战性的合理设计的氧化物/铜接触。针对SnO 2/Cu复合材料润湿性差的问题，设计了Zn 2SnO 4/Cu电接触。结果表明，Zn 2SnO 4能显著提高铜基电触头的耐电弧性能，这与Zn 2SnO 4/Cu良好的界面润湿性有关。腐蚀表面的表征表明，Zn 2SnO 4颗粒均匀分布在接触表面，导致稳定的电接触特性。然而，SnO 2通过在表面的团聚而显著恶化了SnO 2/Cu复合材料的耐电弧性。采用密度泛函理论研究了润湿性对电弧电阻的影响机理。结果表明，Zn 2SnO 4/Cu界面上的强极性共价键有助于提高界面的结合强度和润湿性，从而显著提高了材料的耐电弧性能。对于二元SnO 2/Cu界面，离子键导致界面结合力弱，导致电接触特性恶化。揭示了氧化物/Cu界面的结合机理，为合理设计三元氧化物/Cu基电接触材料提供了理论依据。(C)2021由Elsevier Ltd代表中国金属学会出版。
Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cu-based composites under arc erosion. Exploring its influence mechanism, especially at atomic/electronic scales, is significant but challenging for the rational design of oxides/Cu contacts. Here, we designed Zn2SnO4/Cu electrical contacts aiming to solve the poor wettability of SnO2/Cu composites. It was found that Zn2SnO4 could remarkably improve the arc resistance of Cu-based electrical contacts, which was benefited by the excellent interface wettability of Zn2SnO4/Cu. The characterization of eroded surface indicated that Zn2SnO4 particles distributed uniformly on the contact surface, leading to stable electrical contact characteristic. Nevertheless, SnO2 considerably deteriorated the arc resistance of SnO2/Cu composite by agglomerating on the surface. The effect mechanism of wettability on arc resistance was investigated through density function theory (DFT) study. It revealed that strong polar covalent bonds across the Zn2SnO4/Cu interface contributed to improving the interfacial adhesion strength/wettability and thus significantly enhanced the arc resistance. For binary SnO2/Cu interface, ionic bonds resulted in weak interface adhesion, giving rise to deterioration of electrical contact characteristic. This work discloses the bonding mechanism of oxide/Cu interfaces and paves an avenue for the rational design of ternary oxide/Cu-based electrical contact materials. (C) 2021 Published by Elsevier Ltd on behalf of Chinese Society for Metals.