Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
Observation of fast spontaneous emission decay in GaInAsP photonic crystal point defect nanocavity at room temperature
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DOI：
10.1063/1.1811379
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发表时间：
2004-11
影响因子：
4
通讯作者：
T. Baba;D. Sano;K. Nozaki;K. Inoshita;Y. Kuroki
中科院分区：
文献类型：
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作者：
T. Baba;D. Sano;K. Nozaki;K. Inoshita;Y. Kuroki
在室温下，测量了具有GaInAsP量子阱有源区的光子晶体平板纳米腔中的自发辐射衰减。即使远低于激光阈值，衰减也比生长晶片快得多。一个考虑因素，包括增强的自发辐射率的珀塞尔效应，带内弛豫的载流子，非辐射表面复合，空间烧孔，载流子扩散，使我们能够解释不同的衰减寿命之间的共振和非共振条件和不同尺寸的腔。结果，估计自发发射寿命缩短>16倍，这强烈表明存在大的珀塞尔效应。
The spontaneous emission decay in a photonic crystal slab nanocavity with a GaInAsP quantum well active region was measured at room temperature. Even far below lasing threshold, the decay was much faster than that for the as-grown wafer. A consideration including the enhanced spontaneous emission rate by the Purcell effect, intraband relaxation of carriers, nonradiative surface recombination, spatial hole burning, and carrier diffusion enabled us to explain different decay lifetime between on- and off-resonant conditions and between different size cavities. As a result, >16-fold shorter spontaneous emission lifetime was estimated, which strongly suggests the existence of a large Purcell effect.