Electronic Excitations and Structure of Heteroepitaxial Li$_{2}$IrO$_{3}$ Thin Films
Electronic Excitations and Structure of Heteroepitaxial Li$_{2}$IrO$_{3}$ Thin Films
复制标题
异质外延Li$_{2}$IrO$_{3}$薄膜的电子激发和结构
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
M. Lorenz
中科院分区：
文献类型：
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作者：
Marcus Jenderka;R. Schmidt‐Grund;M. Grundmann;M. Lorenz
薄膜是铱酸盐中出现的奇异基态应用的先决条件，这种基态是由强自旋轨道耦合和电子相关相互作用产生的。报道了脉冲激光在ZrO$_{2}$:Y（001）单晶衬底上沉积Li$_{2}$IrO$_{3}$异质外延薄膜。x射线衍射证实了优先的（001）面外晶体取向与确定的面内外延关系。35 ~ 300 K之间的电阻率主要由三维变跳程机制控制。通过椭偏光谱法测定了介电函数，并用傅里叶变换红外透射光谱法进行了补充，发现了一个约300 meV的小光隙，$5d$-$t_{2g}$流形的分裂，以及几个归因于声子和可能的磁振子的隙内激发。
Thin films are a prerequisite for application of the emergent exotic ground states in iridates that result from the interplay of strong spin-orbit coupling and electronic correlations. We report on pulsed laser deposition of heteroepitaxial Li$_{2}$IrO$_{3}$ films on ZrO$_{2}$:Y(001) single crystalline substrates. X-ray diffraction confirms a preferential (001) out-of-plane crystalline orientation with a defined in-plane epitaxial relationship. Resistivity between 35 and 300 K is dominated by a three-dimensional variable range hopping mechanism. The dielectric function is determined by means of spectroscopic ellipsometry and, complemented by Fourier transform infrared transmission spectroscopy, reveals a small optical gap of $approx$ 300 meV, a splitting of the $5d$-$t_{2g}$ manifold, and several in-gap excitations attributed to phonons and possibly magnons.